| Issue |
Rev. Met. Paris
Volume 101, Number 5, May 2004
Science et Génie des Matériaux
|
|
|---|---|---|
| Page(s) | 427 - 439 | |
| DOI | https://doi.org/10.1051/metal:2004164 | |
| Published online | 15 June 2004 | |
Oxidation in air of nitride bonded silicon carbide ceramic
The rate of air oxidation towards 1,000°C of the Si3N4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.
© La Revue de Métallurgie, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.