Table 1

Deposition conditions.

Reagents RF frequency
[MHz]
Pressure
[mTorr]
Power
[W]
HF SiH4/N2/NH3 13.56 650 60
LF SiH4/N2/NH3 0.10 650 60
LF Free NH3 SiH4/N2 0.10 1000 60

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