Issue
Metall. Res. Technol.
Volume 115, Number 4, 2018
Trends in heat treatment and surface engineering
Article Number 406
Number of page(s) 6
DOI https://doi.org/10.1051/metal/2018072
Published online 24 August 2018
  1. M. Vogt, R. Hauptmann, Plasma-deposited passivation layers for moisture and water protection, Surf. Coat. Technol. 74–75, 676–681 (1995), DOI: 10.1016/0257-8972(95)08268-9 [Google Scholar]
  2. G. Schmitt, J.-W. Schultze, F. Faßbender, G. Buß, H. Lüth, M. Schöning, Passivation and corrosion of microelectrode arrays, Electrochim. Acta. 44, 3865–3883 (1999), DOI: 10.1016/S0013-4686(99)00094-8 [Google Scholar]
  3. H. Lin, L. Xu, X. Chen, X. Wang, M. Sheng, F. Stubhan, K.-H. Merkel, J. Wilde, Moisture-resistant properties of SiNx films prepared by PECVD, Thin Solid Films 333, 71–76 (1998), DOI: 10.1016/S0040-6090(98)00812-8 [Google Scholar]
  4. J.W.O. and W.R. Knolle, Behavior of a − SiN: H and a − SiON: H Films in Condensed Water, J. Electrochem. Soc. 139, 3346–3351 (1992) [Google Scholar]
  5. F.H.P.M. Habraken, A.E.T. Kuiper, Silicon nitride and oxynitride films, Mater. Sci. Eng. R Rep. 12, 123–175 (1994), DOI: 10.1016/0927-796X(94)90006-X [Google Scholar]
  6. W.a. Lanford, M.J. Rand, The hydrogen content of plasma-deposited silicon nitride, J. Appl. Phys. 49, 2473–2477 (1978), DOI: 10.1063/1.325095 [Google Scholar]
  7. J. Kanicki, Role of hydrogen in silicon nitride films prepared by various depositions techniques, Mater. Res. Soc. 118, 671–677 (1988), DOI: 10.1557/PROC-118-671 [CrossRef] [Google Scholar]
  8. V.S. Nguyen, W.A. Lanford, Variation of hydrogen bonding, depth profiles, and spin density in plasma-deposited silicon nitride and oxynitride film with deposition mechanism, J. Electrochem. Soc. 107, 970–974 (1986) [Google Scholar]
  9. J.A.A. and W.A.P. S. I. Raider, R. Flitsch, Surface oxidation of silicon nitride films, Electrochem. Soc. 123, (1976), DOI: 10.1149/1.2132877 [Google Scholar]
  10. W.L. and S. Lee, Water-resistant coating on low temperature amorphous silicon nitride films by a thin layer of amorphous silicon hydrogen alloy, J. Electrochem. Soc. 144, 1477–1481 (1997) [Google Scholar]
  11. S.K. Kang, S.W. Hwang, H. Cheng, S. Yu, B.H. Kim, J.H. Kim, Y. Huang, J.A. Rogers, Dissolution behaviors and applications of silicon oxides and nitrides in transient electronics, Adv. Funct. Mater. 24, 4427–4434 (2014), DOI: 10.1002/adfm.201304293 [Google Scholar]
  12. E. Laarz, B.V. Zhmud, L. Bergström, Dissolution and deagglomeration of silicon nitride in aqueous medium, J. Am. Ceram. Soc. 83, 2394–2400 (2000), DOI: 10.1111/j.1151-2916.2000.tb01567.x [Google Scholar]
  13. D.S. Wuu, W.C. Lo, C.C. Chiang, H.B. Lin, L.S. Chang, R.H. Horng, C.L. Huang, Y.J. Gao, Water and oxygen permeation of silicon nitride films prepared by plasma-enhanced chemical vapor deposition, Surf. Coatings Technol. 198, 114–117 (2005), DOI: 10.1016/j.surfcoat.2004.10.034 [CrossRef] [Google Scholar]
  14. A.M. Andringa, A. Perrotta, K. De Peuter, H.C.M. Knoops, W.M.M. Kessels, M. Creatore, Low-temperature plasma-assisted atomic layer deposition of silicon nitride moisture permeation barrier layers, ACS Appl. Mater. Interfaces. 7, 22525–22532 (2015), DOI: 10.1021/acsami.5b06801 [CrossRef] [Google Scholar]
  15. W. Liao, C. Lin, S. Lee, Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature, Appl. Phys. Lett. 65, 2229–2231 (2001), DOI: 10.1063/1.112772 [Google Scholar]
  16. R.W.D.H. Dun, P. Pan, F.R. White, Mechanisms of plasma-enhanced silicon nitride deposition using SiH4/N2 mixture, J. Electrochem. Soc. 128, 1555–1563 (n.d.) [Google Scholar]
  17. T. Karabacak, Y.-P. Zhao, G.-C. Wang, T.-M. Lu, Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition, Phys. Rev. B. 66, 1–10 (2002), DOI: 10.1103/PhysRevB.66.075329 [Google Scholar]
  18. D.W.H.J.N. Chiang, S.G. Ghanayem, Low-temperature hydrolysis (oxidation) of plasma-deposited silicon nitride films, Chem. Mater. 1, 194–198 (1989), DOI: 10.1021/cm00002a006 [Google Scholar]
  19. T. Oku, M. Okumura, M. Totsuka, T. Shiga, M. Takemi, Moisture resistance of insulating films for compound semiconductor devices, in: CS MANTECH Conference, Denver, USA 2014, pp. 179–182 [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.